american microsystems, inc. reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. 2.28.02 fs6209 fs6209 fs6209 fs6209 dual pll vcxo clock generator ic dual pll vcxo clock generator ic dual pll vcxo clock generator ic dual pll vcxo clock generator ic iso9001 iso9001 iso9001 iso9001 1.0 features ? dual phase-locked loop (pll) device two output clock frequencies ? on-chip tunable voltage-controlled crystal oscillator (vcxo) allows precise system frequency tuning ? 3.3v supply voltage ? small circuit board footprint (8-pin 0.150 soic) ? custom frequency selections available - contact your local ami sales representative for more information figure 1: pin configuration 1 8 2 3 4 7 6 5 xin vdd xtune vss vss clkb clka xout fs6209 8-pin (0.150 ) soic 2.0 description the fs6209 is a monolithic cmos clock generator ic designed to minimize cost and component count in digital video/audio systems. at the core of the fs6209 is circuitry that implements a voltage-controlled crystal oscillator when an external resonator (nominally 13.5mhz) is attached. the vcxo allows device frequencies to be precisely adjusted for use in systems that have frequency matching requirements, such as digital satellite receivers. two high-resolution phase-locked loops generate two output clocks (clka and clkb) through an array of post- dividers. all frequencies are ratiometrically derived from the vcxo frequency. the locking of all the output fre- quencies together can eliminate unpredictable artifacts in video systems and reduce electromagnetic interference (emi) due to frequency harmonic stacking. table 1: crystal / output frequencies device f xin (mhz) clka (mhz) clkb (mhz) fs6209-01 13.5 54.0000 22.5792 (+1.12ppm) note: contact ami for custom pll frequencies figure 2: block diagram vcxo fs6209 pll xout xin clkb clka xtune divider array pll
2 2.28.02 fs6209 fs6209 fs6209 fs6209 dual pll vcxo dual pll vcxo dual pll vcxo dual pll vcxo clock generator ic clock generator ic clock generator ic clock generator ic iso9001 iso9001 iso9001 iso9001 table 2: pin descriptions key: ai = analog input; ao = analog output; di = digital input; di u = input with internal pull-up; di d = input with internal pull-down; dio = digital input/output; di-3 = three-level digital input, do = digital output; p = power/ground; # = active low pin pin type name description 1 ai xin vcxo feedback 2 p vdd power supply (+3.3v) 3 ai xtune vcxo tune 4 p vss ground 5doclkaclock output a 6doclkbclock output b 7 do vss ground 8 ao xout vcxo drive 3.0 functional block description 3.1 phase-locked loop (pll) the on-chip plls are a standard frequency- and phase- locked loop architecture. the pll multiplies the reference oscillator to the desired frequency by a ratio of integers. the frequency multiplication is exact with a zero synthe- sis error. 3.2 voltage-controlled crystal oscillator (vcxo) the vcxo provides a tunable, low-jitter frequency refer- ence for the rest of the fs6209 system components. loading capacitance for the crystal is internal to the fs6209. no external components (other than the reso- nator itself) are required for operation of the vcxo. continuous fine-tuning of the vcxo frequency is accom- plished by varying the voltage on the xtune pin. the total change (from one extreme to the other) in effective loading capacitance is ??? nominal. when using a crystal with a vcxo, it is important that the crystal load capacitance (as specified in table 4: oper- ating conditions be matched to the load capacitance as presented by the vcxo. the crystal must be specified with the correct load capacitance to obtain the maximum tuning range. the oscillator operates the crystal resonator in the paral- lel-resonant mode. crystal warping, or the ?pulling? of the crystal oscillation frequency, is accomplished by altering the effective load capacitance presented to the crystal by the oscillator circuit. the actual amount that changing the load capacitance alters the oscillator frequency will be dependent on the characteristics of the crystal as well as the oscillator circuit itself. specifically, the motional capacitance of the crystal (usu- ally referred to by crystal manufacturers as c 1 ), the static capacitance of the crystal (c 0 ), and the load capacitance (c l ) of the oscillator determine the warping capability of the crystal in the oscillator circuit. a simple formula to obtain the warping capability of a crystal oscillator is: () ()() c c c c c c c ppm f l l l l 1 0 2 0 6 1 2 1 2 10 ) ( + + ? = ? where c l1 and c l2 are the two extremes of the applied load capacitance. example: a crystal with the following parameters is used. with c 1 = 0.02pf, c 0 = 5pf, c l1 = 10pf, and c l2 = 22.66pf, the coarse tuning range is () ()() ppm . . . f 305 10 5 66 22 5 2 10 6 10 66 22 02 0 = + + ? = ? .
3 2.28.02 fs6209 fs6209 fs6209 fs6209 dual pll vcxo clock generator ic dual pll vcxo clock generator ic dual pll vcxo clock generator ic dual pll vcxo clock generator ic iso9001 iso9001 iso9001 iso9001 4.0 electrical specifications table 3: absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. these conditions represent a stress rating only, and functional operation of the device at these or any other conditions above the operational limits noted in this specification is not implied. exposure to maximum rati ng conditions for extended conditions may affect device performance, functionality, and reliability. parameter symbol min. max. units supply voltage (v ss = ground) v dd v ss -0.5 7 v input voltage, dc v i v ss -0.5 v dd +0.5 v output voltage, dc v o v ss -0.5 v dd +0.5 v input clamp current, dc (v i < 0 or v i > v dd )i ik -50 50 ma output clamp current, dc (v i < 0 or v i > v dd )i ok -50 50 ma storage temperature range (non-condensing) t s -65 150 c ambient temperature range, under bias t a -55 125 c junction temperature t j 125 c lead temperature (soldering, 10s) 260 c input static discharge voltage protection (mil-std 883e, method 3015.7) 2 kv caution: electrostatic sensitive device permanent damage resulting in a loss of functionality or performance may occur if this device is subjected to a high-energy ele c- trostatic discharge. table 4: operating conditions parameter symbol conditions/description min. typ. max. units supply voltage v dd 3.3v 10% 3.0 3.3 3.6 v ambient operating temperature range t a 070c crystal resonator frequency f xtal fundamental mode 5 13.5 18 mhz crystal resonator motional capacitance c 1(xtal) at cut 25 ff crystal loading capacitance c l(xtal) at cut 20 pf
4 2.28.02 fs6209 fs6209 fs6209 fs6209 dual pll vcxo dual pll vcxo dual pll vcxo dual pll vcxo clock generator ic clock generator ic clock generator ic clock generator ic iso9001 iso9001 iso9001 iso9001 table 5: dc electrical specifications unless otherwise stated, v dd = 3.3v 10%, no load on any output, and ambient temperature range t a = 0c to 70c. parameters denoted with an asterisk ( * ) represent nominal characterization data and are not production tested to any specific limits. where given, min and max characterization data are 3 from typical. negative currents indicate current flows out of the device. parameter symbol conditions/description min. typ. max. units overall supply current, dynamic, with loaded outputs i dd f xtal = 13.5mhz; c l = 10pf, v dd = 3.6v 30 ma supply current, static i dd xin = 0v, v dd = 3.6v 3 ma voltage controlled crystal oscillator crystal loading capacitance c l(xtal) as seen by a crystal connected to xin and xout (@ v xtune = 1.65v) 20 pf crystal resonator motional capacitance c 1(xtal) at cut 25 ff vcxo tuning range f xtal = 13.5mhz; c l(xtal) = 20pf; c 1(xtal) = 25ff 300 ppm vcxo tuning characteristic note: positive f for positive v 100 ppm/v crystal drive level r xtal =20 ? ; c l = 20pf 200 uw crystal oscillator feedback (xin) threshold bias voltage v th 860 mv high-level input current i ih 34 a low-level input current i il -21 a crystal oscillator drive (xout) high-level output source current i oh v(xin) = 3.3v, v o = 0v -0.5 ma low-level output sink current i ol v(xin) = 0v, v o = 3.3v 15 ma clock outputs (clka, clkb) high-level output source current * i oh v o = 2.0v -40 ma low-level output sink current * i ol v o = 0.4v 17 ma z oh v o = 0.1v dd ; output driving high 25 output impedance * z ol v o = 0.1v dd ; output driving low 25 ? short circuit source current * i osh v o = 0v; shorted for 30s, max. -55 ma short circuit sink current * i osl v o = 3.3v; shorted for 30s, max. 55 ma
5 2.28.02 fs6209 fs6209 fs6209 fs6209 dual pll vcxo clock generator ic dual pll vcxo clock generator ic dual pll vcxo clock generator ic dual pll vcxo clock generator ic iso9001 iso9001 iso9001 iso9001 table 6: ac timing specifications unless otherwise stated, v dd = 3.3v 10%, no load on any output, and ambient temperature range t a = 0c to 70c. parameters denoted with an asterisk ( * ) represent nominal characterization data and are not production tested to any specific limits. where given, min and max characterization data are 3 from typical. parameter symbol conditions/description clock (mhz) min. typ. max. units overall vcxo stabilization time * t vcxostb from power valid 10 ms pll stabilization time * t pllstb from vcxo stable 500 us synthesis error (unless otherwise noted in frequency table) 0 ppm clock output (clka) duty cycle * ratio of high pulse width (as measured from rising edge to next falling edge at v dd /2) to one clock period 54.00 45 55 % jitter, period (peak-peak) * t j( ? p) from rising edge to next rising edge at v dd /2, c l = 10pf 54.00 390 ps jitter, long term ( y ( )) * t j(lt) from 0-500 s at v dd /2, c l = 10pf compared to ideal clock source 54.00 155 ps rise time * t r v dd = 3.3v; v o = 0.3v to 3.0v; c l = 10pf 1.7 ns fall time * t f v dd = 3.3v; v o = 3.0v to 0.3v; c l = 10pf 1.7 ns clock output (clkb) duty cycle * ratio of high pulse width (as measured from rising edge to next falling edge at v dd /2) to one clock period 22.579 45 55 % jitter, period (peak-peak) * t j( ? p) from rising edge to next rising edge at v dd /2, c l = 10pf 22.579 290 ps jitter, long term ( y ( )) * t j(lt) from 0-500 s at v dd /2, c l = 10pf compared to ideal clock source 22.579 450 ps rise time * t r v dd = 3.3v; v o = 0.3v to 3.0v; c l = 10pf 1.7 ns fall time * t f v dd = 3.3v; v o = 3.0v to 0.3v; c l = 10pf 1.7 ns figure 3: vcxo range vs. tuning voltage tbd
6 2.28.02 fs6209 fs6209 fs6209 fs6209 dual pll vcxo dual pll vcxo dual pll vcxo dual pll vcxo clock generator ic clock generator ic clock generator ic clock generator ic iso9001 iso9001 iso9001 iso9001 5.0 package information table 7: 8-pin soic (0.150") package dimensions dimensions inches millimeters min. max. min. max. a 0.061 0.068 1.55 1.73 a1 0.004 0.0098 0.102 0.249 a2 0.055 0.061 1.40 1.55 b 0.013 0.019 0.33 0.49 c 0.0075 0.0098 0.191 0.249 d 0.189 0.196 4.80 4.98 e 0.150 0.157 3.81 3.99 e 0.050 bsc 1.27 bsc h 0.230 0.244 5.84 6.20 h 0.010 0.016 0.25 0.41 l 0.016 0.035 0.41 0.89 0 8 0 8 b d a 1 seating plane h e 8 1 all radii: 0.005" to 0.01" base plane a 2 e american microsystems, inc. a r c l 7 typ. h x 45 table 8: 8-pin soic (0.150") package characteristics parameter symbol conditions/description typ. units thermal impedance, junction to free-air 8-pin 0.150? soic ja air flow = 0 m/s 110 c/w corner lead 2.0 lead inductance, self l 11 center lead 1.6 nh lead inductance, mutual l 12 any lead to any adjacent lead 0.4 nh lead capacitance, bulk c 11 any lead to v ss 0.27 pf
7 2.28.02 fs6209 fs6209 fs6209 fs6209 dual pll vcxo clock generator ic dual pll vcxo clock generator ic dual pll vcxo clock generator ic dual pll vcxo clock generator ic iso9001 iso9001 iso9001 iso9001 6.0 ordering information ordering code device number package type operating temperature range shipping configuration 11640-801 fs6209-01 8-pin (0.150?) soic (small outline package) 0 c to 70 c (commercial) tape and reel 11640-811 fs6209-01 8-pin (0.150?) soic (small outline package) 0 c to 70 c (commercial) tubes copyright ? 1999 american microsystems, inc. devices sold by ami are covered by the warranty and patent indemnification provisions appearing in its terms of sale only. ami makes no warranty, express, statutory implied or by description, regarding the information set forth herein or regarding the fr eedom of the described devices from patent infringement. ami makes no warranty of merchantability or fitness for any purposes. ami re - serves the right to discontinue production and change specifications and prices at any time and without notice. ami?s products are intended for use in commercial applications. applications requiring extended temperature range, unusual environmental require- ments, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recom- mended without additional processing by ami for such applications. american microsystems, inc., 2300 buckskin rd., pocatello, id 83201, (208) 233-4690, fax (208) 234-6796, www address: http://www.amis.com e-mail: tgp@amis.com
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